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2SD873 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD873
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V (Min)
·High Power Dissipation
·High Current Capability
APPLICATIONS
·High power amplifier applications.
·High power switching applications.
·DC-DC converter applications.
·Regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
16
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
4
A
150
W
175
â
-65~175 â
isc Websiteï¼www.iscsemi.cn
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