2SD868 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.5A,1500V,50W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD868
DESCRIPTION
·With TO-3 package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For use in color TV deflection circuits
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-collector voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
1500
600
5
2.5
1.0
50
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rθjc
Thermal resistance junction to case
MAX
2.5
UNIT
℃/W