2SD867 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD867
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 110V(Min).
·Excellent Safe Operating Area
·Low collector saturation voltage
: V_CE(sat)= 3.0V(Max)@ I_C = 10A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·High voltage high current power transistors
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
130
V
V_CEO Collector-Emitter Voltage
110
V
V_EBO
I_C
Emitter-Base Voltage
Collector Current-Continuous
7
V
10
A
I_CP
Collector Current-Peak
15
A
I_B
Base Current-Continuous
7
A
P_C
Collector Power Dissipation@T_C=25℃ 100
W
T_J
Junction Temperature
175
℃
T_stg
Storage Temperature
-65~175 ℃
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