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| 2SD864 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD864
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1.5A
·Complement to Type 2SB765
APPLICATIONS
·Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
6
A
30
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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