2SD862 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD862
DESCRIPTION
·High Collector Current-I_C= 2A
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 20V(Min)
·Good Linearity of h_FE
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high frequency, Low Vce(sat) middle power
transistors in a plastic envelope, primarily for use in audio
and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
20
V
V_CEO Collector-Emitter Voltage
20
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
2
A
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.5
A
10
W
150
℃
-55~150
℃
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