2SD847 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – HIGH POWER DARLINGTON HIGH SPEED SWITCHING

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Good Linearity of h_FE
·High Collector Current
·Wide Area of Safe Operation
·High Reliability
·Complement to Type 2SB757
APPLICATIONS
·Audio amplifier applications
·Series regulators applications
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO Collector-Emitter Voltage
40
V
VEBO
Emitter-Base voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
T_stg
Storage Temperature Range
5
A
80
W
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case 1.56 ℃/W
isc Product Specification
2SD847
isc Website：www.iscsemi.cn