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2SD843 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – HIGH CURRENT SWITCHING APPLICATIONS. | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD843
DESCRIPTION
·High Collector Current:: IC= 7A
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A
·High Collector Power Dissipation
·Complement to Type 2SB753
APPLICATIONS
·High current switching applications
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
7
A
1.5
W
40
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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