2SD837 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – 2SD837

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD837
DESCRIPTION
·High DC Current Gain-
: h_FE= 1000(Min.)@I_C= 3A
·High Switching Speed
APPLICATIONS
·Audio power amplifiers
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
60
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
4
A
I_CM
Base Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
8
A
40
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn