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| 2SD835 Datasheet, PDF (1/2 Pages) Fuji Electric – TRILPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE SWITCHING | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD835
DESCRIPTION
·High DC Current Gain-
: hFE= 400(Min) @IC= 4A
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.) @ IC= 4A
APPLICATIONS
·Electronic ignitor
·Relay& solenoid drivers
·Motor controls
·Switching regulators
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO(SUS) Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
400
V
350
V
400
V
15
V
6
A
0.3
A
40
W
150
â
-45~150
â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
3.0 â/W
isc Websiteï¼www.iscsemi.cn
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