2SD822 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD822
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Switching Speed
·Low Collector Saturation Voltage-
: V_CE(sat)= 5.0V(Max.)@ I_C= 6A
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CEO
Collector-Emitter Voltage
600
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
7
A
I_E
Emitter Current- Continuous
P_C
Collector Power Dissipation
@ T_C≤90℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-7
A
50
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn