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2SD811 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD811
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 900V (Min)
·High Switching Speed
·Low collector saturation voltage
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
900
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
10
A
50
W
150
â
-55-150 â
isc websiteï¼www.iscsemi.com
1 isc & iscsemi is registered trademark
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