2SD807 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD807
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·Low collector saturation voltage
·With TO-3 Package
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for high voltage power switching TV horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
1500
V
V_CEO Collector-Emitter Voltage
800
V
V_EBO
Emitter-Base Voltage
7
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
8
A
50
W
150
℃
-65-150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}