2SD800 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD800
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 750V (Min)
·High Switching Speed
·Low collector saturation voltage
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
750
V
V_CEO Collector-Emitter Voltage
450
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
4
A
I_CM
Collector Current-Peak
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
6
A
30
W
150
℃
-55-150 ℃
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