2SD797 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED TYPE

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD797
DESCRIPTION
·With TO-3 package
·High current capability
·High power dissipation
APPLICATIONS
·High power amplifier applications
·High power switching applications
·DC-DC converter applications
·Regulator applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
Fig.1 simplified outline (TO-3) and symbol
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
100
80
7
30
8
200
175
-65~175
UNIT
V
V
V
A
A
W
℃
℃