2SD793 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD793
DESCRIPTION
·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= 30V(Min.)
·Low Collector to Emitter Saturation Voltage
: VCE(sat)= 2.0V(Max.)@IC= 1.5A
·Excellent hFE linearity
·Complement to Type 2SB743
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICP
Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
5
A
10
W
1
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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