2SD768 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD768
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SB727
·DARLINGTON
APPLICATIONS
·For medium speed and power
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-Peak
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
120
120
7
6
10
40
150
-50~150
UNIT
V
V
V
A
A
W
℃
℃