2SD753 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD753
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
·High Power Dissipation-
: PC= 150W(Max)@TC=25℃
·High Current Capability
·Complement to Type 2SB723
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Baser Current-Continuous
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Storage Temperature Range
200
V
200
V
5
V
15
A
4
A
150
W
150
℃
-55~150 ℃
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