2SD732 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD732
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 120V (Min)
·High Current Capability
·Complement to Type 2SB696
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
MAX
UNIT
V_CBO
Collector-Base Voltage
150
V
V_CEO
Collector-Emitter Voltage
120
V
V_EBO
Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
12
A
80
W
150
℃
-40~150 ℃
isc Website：www.iscsemi.cn