2SD730 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
2SD730
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 12A
·Low Collector Saturation Voltage-
: VCE (sat)= 3.0V(Max.)@ IC= 20A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power switching
·Hammer drivers
·Series and shunt regulator
·General purpose amplifier amplifiers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7.0
V
IC
Collector Current -Continuous
25
A
ICP
Collector Current-Peak
40
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation@TC=25℃ 125
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}