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| 2SD726 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPNPower Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPNPower Transistor
isc Product Specification
2SD726
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
·High Power Dissipation
·Complement to Type 2SB690
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
8
A
40
W
150
â
-45~150 â
isc Websiteï¼www.iscsemi.cn
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