2SD723 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
isc Product Specification
2SD723
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min)
·DC Current Gain -hFE = 50(Min)@ IC= 0.5A
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Pulse
IB
Base Current
PC
Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
Tstg
Storage Ttemperature Range
VALUE UNIT
100
V
100
V
5
V
4
A
6
A
1
A
40
W
150
℃
-65~150 ℃
isc website：www.iscsemi.com
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