2SD711 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD711
DESCRIPTION
·High DC Current Gain
·Low Collector Saturation Voltage
·Excellent Safe Operating Area
·High Reliability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor controls
·Inverters，choppers
·Switching regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
VCEO(SUS) Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
500
V
450
V
6
V
15
A
1
A
100
W
150
℃
-55~150
℃
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.25 ℃/W
isc website：www.iscsemi.com
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