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| 2SD692 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor | |||
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
2SD692
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 1000 (Min) @ IC =1 Adc
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCER Collector-Emitter Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
6
A
IBB
Base Current -Continuous
3
A
PC
Collector Power Dissipation@TC=25â
50
W
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150 â
isc Websiteï¼www.iscsemi.cn
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