2SD690 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor DESCRIPTION

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD690
DESCRIPTION
·Collector Current: IC= 7A
·Collector-Emitter BreakdownVoltage-
: V(BR)CEO= 70V(Min.)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
70
V
VCEO Collector-Emitter Voltage
70
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
10
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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