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| 2SD689 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD689
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
·Complement to Type 2SB679
APPLICATIONS
·Low frequency medium power amplifier and medium speed
switching applications.
·Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
100
V
10
V
1.5
A
10
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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