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| 2SD684 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD684
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min)
·High DC Current Gain-
: hFE= 1500(Min.)@IC= 2A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max) @IC= 4A
APPLICATIONS
·Igniter applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
30
W
150
â
-65~150
â
isc Websiteï¼www.iscsemi.cn
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