2SD669 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD669 2SD669A
DESCRIPTION
With TO-126 package
Complement to type 2SB649/649A
High breakdown voltage V _CEO:120/160V
High current 1.5A
Low saturation voltage,excellent h _FE linearity
APPLICATIONS
For low-frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SD669
2SD669A
Open emitter
V_CEO
Collector-emitter voltage
2SD669
2SD669A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-peak
P_D
Total power dissipation
T_a=25
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
180
180
120
160
5
1.5
3
1
20
150
-55~150
UNIT
V
V
V
A
A
W