2SD650 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD650
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min)
·High Power Dissipation
·Low Collector Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for line operated switchmode applications such as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
400
VCEO
Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
7
IC
Collector Current
6
ICM
Collector Current-peak
8
IB
Base Current
0.5
PC
Collector Power Dissipation
@TC=25℃
80
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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