2SD649 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Si NPN Triple Diffused Junction Mesa

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD649
DESCRIPTION
·High Breakdown Voltage-
: V_CBO= 1500V (Min)
·High Reliability
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
1500
V
V_CES
Collector-Emitter Voltage
1500
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current- Continuous
3
A
I_CP
Collector Current-Pulse
P_C
Collector Power Dissipation
@ T_C≤90℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
5
A
35
W
130
℃
-65~130
℃
isc Website：www.iscsemi.cn