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| 2SD640 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON NPN TRIPLE DIFFUSEO TYPE | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD640
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V (Max.)@ IC= 5A
APPLICATIONS
·High voltage switching applications.
·High power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
100
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
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