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| 2SD628 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD628
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(sus)= 100V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 5A
·Low Collector Saturation Voltage-
: VCE (sat)= 2.0V(Max.)@ IC= 5A
·Complement to Type 2SB638
APPLICATIONS
·Designed for low frequency power amplifier and high current
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continunous
10
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continunous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
80
W
150
â
-65~+150 â
isc Websiteï¼www.iscsemi.cn
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