2SD608 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD608
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= 160V(Min)
·Complement to Type 2SB628
APPLICATIONS
·Designed for audio frequency power amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
160
V
V_CEO
Collector-Emitter Voltage
160
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
1.5
A
I_CM
Collector Current-Peak
3.0
A
I_BB
Base Current-Continuous
Collector Power Dissipation
@ T_a=25℃
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
0.3
A
1.5
W
20
150
℃
-55~150
℃
isc Website：www.iscsemi.cn