2SD600K Datasheet, PDF (1/4 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD600 2SD600K
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB631/631K
·High breakdown voltage V_CEO100/120V
·High current 1A
·Low saturation voltage
APPLICATIONS
·For low-frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2SD600
2SD600K
Open emitter
V_CEO
Collector-emitter voltage
2SD600
2SD600K
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current (DC)
I_CM
Collector current-peak
P_D
Total power dissipation
T_a=25℃
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
100
120
100
120
5
1
2
1
8
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃