2SD597 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD597
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Excellent Safe Operating Area
·High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
A
8
A
60
W
150
℃
-65~150 ℃
isc website：www.iscsemi.com
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