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| 2SD582 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – 80~100W AUDIO AMP, POWER OUTPUT Complementary pair with 2SB612/A | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD582
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@ IC= 7A
·Complement to Type 2SB612
APPLICATIONS
·Designed for 80~100W audio amplifier power output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
100
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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