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2SD568 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD568
DESCRIPTION
·High Collector Current:: IC= 7A
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@IC= 5A
·Complement to Type 2SB707
APPLICATIONS
·Designed for low-frequency power amplifiers and low-speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
60
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IBB
Base Current-Continuous
Total Power Dissipation
@ TC=25℃
PC
Total Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
3.5
A
40
W
2
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn