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| 2SD560 Datasheet, PDF (1/3 Pages) Fujitsu Component Limited. – SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP, 100 VOLT) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD560
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·High DC Current Gain
: hFE= 2000(Min) @IC= 3.0A
·Low Saturation Voltage
·Complement to Type 2SB601
APPLICATIONS
·Designed for low frequency power amplifiers and low speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICP
Collector Current-Peak
8
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
1.5
W
30
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
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