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| 2SD557 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD557
DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
·High Collector Power Dissipation
APPLICATIONS
·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
140
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature
140
V
7
V
15
A
20
A
120
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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