|
2SD556 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
|
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD556
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V (Min)
·Wide Area of Safe Operation
·High Power
·High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
20
A
120
W
175
â
Tstg
Storage Temperature Range
-65~175 â
isc websiteï¼www.iscsemi.com1
isc & iscsemi is registered trademark
|
▷ |