2SD554 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD554
DESCRIPTION
·Contunuous Collector Current-IC= 2A
·Power Dissipation-PD=30W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0 V(Max)@ IC = 1A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2.0
A
ICM
Collector Current-Peak
5.0
A
IB
Base Current
1.0
A
PC
Collector Power Dissipation@TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc website：www.iscsemi.com¹
isc & iscsemi is registered trademark