2SD553 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD553
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SB553
·Low collector saturation voltage
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
T_a=25℃
VALUE
70
50
5
7
1
40
1.5
150
-50~150
UNIT
V
V
V
A
A
W
℃
℃