2SD544 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD544
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 90V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max.) @ IC= 4.0A
·With TO-220C Package
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio frequency power amplifier and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
PC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Storage Temperature Range
100
V
90
V
8
V
5
A
8
A
2
A
43
W
150
℃
-65~150 ℃
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