2SD535 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – 2SD544

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD535
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min)
·Excellent Safe Operating Area
·High Current Capability
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed, high current, high power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
250
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
12
A
15
A
150
W
150
℃
-65~150 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}