2SD534 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD534
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 110V(Min)
·Excellent Safe Operating Area
·High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for relay drivers , high-speed inverters,converters,and
other general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
110
V
VCEO Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
15
A
100
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website：www.iscsemi.com
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