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| 2SD523 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD523
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A
·Low Collector Saturation Voltage-
: VCE (sat)= 1.5V(Max.)@ IC= 3A
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
7
A
IBB
Base Current-Continunous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
50
W
150
â
-65~+150 â
isc Websiteï¼www.iscsemi.cn
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