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2SD504 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
2SD504
DESCRIPTION
·High DC current gain-
hFE = 750 (Min) @ IC = 6A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current
0.2
A
PC
Collector Power Dissipation@TC=25â 150
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150 â
isc websiteï¼www.iscsemi.com
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