2SD469 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
isc Product Specification
2SD469
DESCRIPTION
Low Collector-Emitter Breakdown Voltage
V(BR)CEO= 110V (Min)
Collector Power Dissipation
Pc=100W@TC=25℃
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
150
V
VCEO Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current -Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 100
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
℃
-65~150 ℃
isc website：www.iscsemi.com
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