2SD463 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD463
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High DC Current Gain
: hFE= 3000(Min) @IC= 5A
·Low Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
ICP
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
7
A
12
A
0.3
A
80
W
150
℃
-65~150
℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}