2SD460 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD460
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High DC Current Gain
: hFE= 1500(Min) @IC= 5A
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
IC
ICP
IB
PC
TJ
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
Junction Temperature
Storage Temperature Range
5
V
7
A
12
A
0.3
A
2
W
50
150
℃
-65~150
℃
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