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| 2SD428 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD428
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High Power Dissipation-
: PC= 60W(Max)@TC=25â
·Complement to Type 2SB558
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 40W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IE
Emitter Current-Continuous
Collector Power Dissipation
PC
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-7
A
60
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
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